CONTROL OF ELECTRON-CONCENTRATION IN LIQUID-PHASE EPITAXIAL LAYERS OF PB1-XSNXTE BY INDIUM DOPING

被引：8

作者：

EGER, D

ZEMEL, A

SHTRIKMAN, H

TAMARI, N

机构：

来源：

MATERIALS RESEARCH BULLETIN | 1980年 / 15卷 / 09期

关键词：

D O I：

10.1016/0025-5408(80)90038-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1333 / 1338

页数：6

共 15 条

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[2]

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[5]

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ZEMEL, A .

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[7] LIQUID-PHASE EPITAXIAL-GROWTH OF LASER HETEROSTRUCTURES IN PB1-X SNXTE [J].

TOMASETTA, LR ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1974, 24 (11) :567-570

[8] THRESHOLD REDUCTION IN PB1-X SNX TE LASER-DIODES THROUGH USE OF DOUBLE HETEROJUNCTION GEOMETRIES [J].

TOMASETTA, LR ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :440-442

[9] THALLIUM AND INDIUM DOPED PB1-XSNXTE BY LIQUID-PHASE EPITAXY [J].

TOMASETTA, LR ;

FONSTAD, CG .

MATERIALS RESEARCH BULLETIN, 1974, 9 (06) :799-802

[10]

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