NEW THEORY OF FLICKER NOISE

被引：9

作者：

PELLEGRINI, B

机构：

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.22.4684

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4684 / 4691

页数：8

共 11 条

[1]

DEKOCK AJR, 1978, 14TH P INT C PHYS SE, P103

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HORN, PM .

PHYSICAL REVIEW LETTERS, 1979, 43 (09) :646-649

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FIRLE, TE ;

WINSTON, H .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :716-717

[4] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE [J].

HOOGE, FN .

PHYSICA, 1972, 60 (01) :130-+

[5]

KARMERSKI LL, 1975, J APPL PHYS, V40, P791

[6]

MILNES AG, 1973, DEEP IMPURITY SEMICO

[7] MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS [J].

PELLEGRINI, B ;

SALARDI, G .

SOLID-STATE ELECTRONICS, 1975, 18 (09) :791-798

[8] CURRENT-VOLTAGE CHARACTERISTICS OF SILICON METALLIC-SILICIDE INTERFACES [J].

PELLEGRINI, B .

SOLID-STATE ELECTRONICS, 1975, 18 (05) :417-426

[9]

PELLEGRINI B, UNPUBLISHED

[10] ELECTRICAL-PROPERTIES AND CONDUCTION MECHANISMS OF RUBASED THICK-FILM (CERMET) RESISTORS [J].

PIKE, GE ;

SEAGER, CH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5152-5169

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