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THIN-FILM ANALYSIS USING RUTHERFORD SCATTERING

被引：10
作者：
MORGAN, DV [1 ]
机构：
[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS2 9JT,YORKSHIRE,ENGLAND
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1974年 / 7卷 / 05期
关键词：
D O I：
10.1088/0022-3727/7/5/301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：653 / 662
页数：10
相关论文
共 14 条
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[13]   INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES [J].
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[14]   ANALYSIS OF THIN EPITAXIAL LAYERS OF GAAS USING MEV ALPHA-PARTICLES [J].
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 17 (02) :K143-K147
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