IDENTIFICATION OF THE PHOSPHOR VACANCY DEFECT IN ELECTRON-IRRADIATED P-TYPE INP

被引：31

作者：

VONBARDELEBEN, HJ

机构：

[1] CNRS, Groupe de Physique des, Solides, Paris, Fr, CNRS, Groupe de Physique des Solides, Paris, Fr

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 57卷 / 02期

关键词：

Acknowledgements - I thank J.C. Bourgoin for stimulating discussions and Anne Gouttiere for participating at the EPR measurementsT. his work has been partially funded by the Centre National d’Etude des Tellecommunications( No: 846B007909245);

D O I：

10.1016/0038-1098(86)90529-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：137 / 139

页数：3

共 11 条

[1]

DEIRI M, 1984, J PHYS C SOLID STATE, V17, pL793, DOI 10.1088/0022-3719/17/29/007

[2] ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].

KAUFMANN, U ;

SCHNEIDER, J ;

RAUBER, A .

APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313

[3] IDENTIFICATION OF ISOLATED GA VACANCY IN ELECTRON-IRRADIATED GAP THROUGH EPR [J].

KENNEDY, TA ;

WILSEY, ND .

PHYSICAL REVIEW LETTERS, 1978, 41 (14) :977-980

[4] ELECTRON-PARAMAGNETIC RESONANCE IDENTIFICATION OF THE PHOSPHORUS ANTISITE IN ELECTRON-IRRADIATED INP [J].

KENNEDY, TA ;

WILSEY, ND .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1089-1091

[5]

LEVINSON M, 1983, J ELECT MATER, V12, P433

[6] ENERGY AND ORIENTATION DEPENDENCE OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN INP [J].

SIBILLE, A ;

SUSKI, J ;

LEROUX, G .

PHYSICAL REVIEW B, 1984, 30 (02) :1119-1121

[7] ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP [J].

SIBILLE, A ;

BOURGOIN, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :956-958

[8]

SIBILLE A, 1984, 13TH INT C DEF SEM S, P1155

[9]

VONBARDELEBEN HJ, UNPUB

[10] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].

WAGNER, RJ ;

KREBS, JJ ;

STAUSS, GH ;

WHITE, AM .

SOLID STATE COMMUNICATIONS, 1980, 36 (01) :15-17

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