THE SURFACE-CHEMISTRY OF ALUMINUM NITRIDE MOCVD ON ALUMINA USING TRIMETHYLALUMINUM AND AMMONIA AS PRECURSORS

被引：53

作者：

LIU, HN ^{[1
]}

BERTOLET, DC ^{[1
]}

ROGERS, JW ^{[1
]}

机构：

[1] UNIV WASHINGTON,DEPT CHEM ENGN,BF-10,SEATTLE,WA 98195

来源：

SURFACE SCIENCE | 1994年 / 320卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(94)00512-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reactions of trimethylaluminum (TMAl) and ammonia (NH3) on gamma-alumina were studied by Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) to explore their role in the MOCVD growth of AlN. FTIR and XPS assignments of surface species were directly correlated based on data taken within the same high-vacuum system. The observed N(1s) binding energies of NH2, NH3, TMAl:NH3 adduct, nitride, and dinitrogen complexes correlate well with the vibrational data. Coadsorption of TMAl and NH3 at room temperature leads to the formation of Al-N covalent bonds, as indicated by the presence of bridge-bonded NH3 species. Upon heating to similar to 600 K and above, the appearance of vibrational bands corresponding to AlN indicate the emergence of extended Al-N networks on the surface; AlNN and HAlNN contaminants are also formed. A reaction model for AlN film formation is proposed.

引用

页码：145 / 160

页数：16

共 96 条

[61] MECHANISM OF NUCLEATION AND ATOMIC LAYER GROWTH OF ALN ON SI [J].