GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM

被引：79

作者：

HU, SM

机构：

来源：

PHYSICAL REVIEW | 1969年 / 180卷 / 03期

关键词：

D O I：

10.1103/PhysRev.180.773

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：773 / +

页数：1

共 38 条

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