THE MECHANISM OF MODULATED OPTICAL REFLECTANCE IMAGING OF DISLOCATIONS IN SILICON

被引：6

作者：

BAILEY, J ^{[1
]}

WEBER, ER ^{[1
]}

OPSAL, J ^{[1
]}

机构：

[1] THERMA WAVE INC,FREMONT,CA 94539

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90192-N

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Modulated optical reflectance (MOR) images of plastically-deformed silicon show slip bands created by the deformation, which are also visible in electron beam induced conductivity images. Annealing the material decreases the electrical activity of the dislocations, but has no effect on the MOR image. MOR measurements of implanted and annealed silicon wafers show that a high MOR response is caused by decreased diffusivity in the surface layer. We conclude that the MOR contrast of defects in silicon is due primarily to scattering by dislocations and ionized impurities, and that carrier recombination is not significant. © 1990.

引用

页码：217 / 225

页数：9

共 23 条

[1]

Bailey J., 1989, REV PROGR QUANTITATI, P1263

[2]

BAILEY RJ, 1989, THESIS U CALIFORNIA

[3] EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED EMITTERS [J].