TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .1. THEORETICAL RESULTS

被引：70

作者：

PASSLER, R

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 85卷 / 01期

关键词：

D O I：

10.1002/pssb.2220850122

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：203 / 215

页数：13

共 59 条

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