LOW-PRESSURE VAPOR-PHASE EPITAXY OF GAAS IN A HALOGEN TRANSPORT-SYSTEM

被引：31

作者：

PUTZ, N ^{[1
]}

VEUHOFF, E ^{[1
]}

BACHEM, KH ^{[1
]}

BALK, P ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,SONDERFORSCH BEREICH FESTKORPERELEKTR 56,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 10期

关键词：

D O I：

10.1149/1.2127218

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2202 / 2206

页数：5

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