MICROWAVE CAPABILITY OF 1.5 MU-M-GATE GAAS MOSFET

被引：11

作者：

TOKUDA, H ^{[1
]}

ADACHI, Y ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 25期

关键词：

D O I：

10.1049/el:19770538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：761 / 763

页数：3

相关论文

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