ANODIC-OXIDATION AND MOS DEVICES OF GAAS AND GAP

被引：5

作者：

IKOMA, T ^{[1
]}

TOKUDA, H ^{[1
]}

YOKOMIZO, H ^{[1
]}

ADACHI, Y ^{[1
]}

机构：

[1] UNIV TOKYO, INST IND SCI, MINATO KU, TOKYO 106, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷

关键词：

D O I：

10.7567/JJAPS.16S1.475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：475 / 479

页数：5

相关论文

共 14 条

[1] GALLIUM ARSENIDE MOS TRANSISTORS
BECKE, H
HALL, R
WHITE, J
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &
[2] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[3] SURFACE STATES AND INSULATOR TRAPS AT SI3N4-GAAS INTERFACE
COOPER, JA
SCHWARTZ, RJ
WARD, ER
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1219 - +
[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE
FOSTER, JE
SWARTZ, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) : 1410 - +
[5] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[6] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1975, 11 (03) : 53 - 54
[7] C-V CHARACTERISTICS OF GAP MOS DIODE WITH ANODIC OXIDE FILM
IKOMA, T
YOKOMIZO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 521 - 523
[8] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
SAKAI, Y
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[9] KERN W, 1970, RCA REV, V31, P207
[10] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390