DYNAMIC AND STEADY-STATE INJECTION OF ELECTRON-HOLE PLASMA IN P-TYPE INSB

被引：5

作者：

ANCKERJOHNSON, B

ROBBINS, WP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.1660093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：762 / +

页数：1

共 15 条

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[2]

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[3]

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[6]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P280

[7] TRANSIENT DOUBLE INJECTION IN SEMICONDUCTORS WITH TRAPS [J].

DEAN, RH .

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[9] THEORY OF TRANSIENT PHENOMENA IN THE TRANSPORT OF HOLES IN AN EXCESS SEMICONDUCTOR [J].

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[10] RECOMBINATION CENTERS IN INSB [J].

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