LASER DEPOSITION OF Y-BA-CU-O ON ZRO2-COATED SAPPHIRE SUBSTRATES

被引：1

作者：

BASOVICH, AJ

GAPONOV, SV

JASTRABIK, L

JELINEK, M

KISELEV, NA

KLUENKOV, EB

LEBEDEV, OI

MAZO, LA

SOUKUP, L

STRIKOVSKIJ, MD

TALANOV, VV

VASILIEV, AL

机构：

[1] CAS, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

[2] RUSSIAN ACAD SCI, INST CRYSTALLOG, MOSCOW 117333, RUSSIA

来源：

THIN SOLID FILMS | 1993年 / 228卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90596-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial YBa2Cu3O7-delta and ZrO2 thin films were deposited by laser ablation on sapphire (1102BAR) substrates. Layers with a zero-resistance temperature T(z) of 89.5 K and a critical current density J(c)(77 K) of 1.5 X 10(6) A cm-2 were created. The droplet density on the film surface was lower than 10(4) cm-2. The microwave surface resistance R(s) (77 K) = 2.4 mOMEGA for f = 8 GHz was measured. (Y-Ba-Cu-O) -ZrO2-sapphire interfaces were studied by Auger spectroscopy and high resolution transmission electron microscopy.

引用

页码：193 / 195

页数：3

共 6 条

[1] Y1BA2CU3O7-X THIN-FILMS GROWN ON SAPPHIRE WITH EPITAXIAL MGO BUFFER LAYERS [J].