DRY ETCHING OF THIN-FILM INN, AIN AND GAN

被引：62

作者：

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

REN, F ^{[1
]}

LOTHIAN, JR ^{[1
]}

WISK, PW ^{[1
]}

KATZ, A ^{[1
]}

CONSTANTINE, C ^{[1
]}

机构：

[1] PLASMA THERM IP,ST PETERSBURG,FL 33716

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期

关键词：

D O I：

10.1088/0268-1242/8/2/026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Smooth, anisotropic dry etching of InN, AlN and GaN layers is demonstrated using low-pressure (1-30 mTorr) CH4/H-2/Ar or Cl2/H-2 ECR discharges with additional Dc biasing of the sample. The etch rates are in the range 100-400 angstrom min-1 at 1 mTorr and -150 V DC for Cl2/H-2, while higher biases are needed to initiate etching in CH4/H-2/H discharges. The presence of hydrogen in the gas chemistries is necessary to facilitate equi-rate removal of the group III and nitrogen etch products, leading to smooth surface morphologies.

引用

页码：310 / 312

页数：3

共 5 条

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