A COMPREHENSIVE ANALYTICAL MODEL FOR METAL-INSULATOR SEMICONDUCTOR (MIS) DEVICES

被引：46

作者：

DOGHISH, MY

HO, FD

机构：

[1] Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 12期

关键词：

D O I：

10.1109/16.168723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive model for MIS (Metal-Insulator-Semiconductor) devices under dark conditions has been developed which consists of a wide range of parameters. The parameters neglected by other authors have been included. The effects of surface states, silicon dioxide thickness, substrate doping, fixed oxide charges, substrate thickness, and metal work function are all taken into account. The permittivity and barrier height of thin oxide are included in the calculation. The limits on equilibrium and nonequilibrium are explored.

引用

收藏

页码：2771 / 2780

页数：10

相关论文

共 21 条

[1] OPTICALLY INDUCED INVERSION IN THE MIS SOLAR-CELL [J].

ABDOU, AA ;

HABIB, SED .

SOLID-STATE ELECTRONICS, 1986, 29 (07) :751-758

[2]

ANTOGNETTI P, 1983, PROCESS DEVICE SIMUL

[3] SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1979, 22 (09) :809-817

[4] STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1602-+

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[6] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[7] ON THE CURRENT TRANSPORT MECHANISM IN A METAL-INSULATOR SEMICONDUCTOR (MIS) DIODE [J].

CHATTOPADHYAY, P ;

DAW, AN .

SOLID-STATE ELECTRONICS, 1986, 29 (05) :555-560

[8] EFFECT OF SURFACE-STATES ON THE BARRIER HEIGHT IN A MIS DIODE IN THE PRESENCE OF INVERSION [J].

CHATTOPADHYAY, P ;

DAW, AN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1985, 58 (05) :775-779

[9] THEORY OF TUNNELING INTO INTERFACE STATES [J].

FREEMAN, LB ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1483-+

[10] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561