EXTRACTION OF THE MINORITY-CARRIER RECOMBINATION LIFETIME FROM FORWARD DIODE CHARACTERISTICS

被引：48

作者：

VANHELLEMONT, J

SIMOEN, E

CLAEYS, C

机构：

[1] IMEC, B-3001 Leuven

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期

关键词：

D O I：

10.1063/1.113465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple procedure is proposed to calculate the minority carrier recombination lifetime from forward diode I/V characteristics. By using diodes with strongly different perimeter to area ratio and by taking into account the diode ideality, more accurate lifetime values are obtained. The thus obtained values are in excellent agreement with the ones obtained from microwave absorption measurements of photoconductive decay as is illustrated on Czochralski substrates with different oxygen densities and pretreatments.© 1995 American Institute of Physics.

引用

页码：2894 / 2896

页数：3

共 6 条

[1] OXYGEN PRECIPITATION EFFECTS ON SI-N+-P JUNCTION LEAKAGE BEHAVIOR [J].