DIFFERENT HYDROGEN PASSIVATION MECHANISMS BETWEEN LOW-TEMPERATURE AND HIGH-TEMPERATURE POLY-SI TFTS

被引：12

作者：

KIM, YS ^{[1
]}

CHOI, KY ^{[1
]}

HAN, MK ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT ELECT ENGN,SEOUL 151742,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

POLYCRYSTALLINE SILICON; THIN-FILM TRANSISTOR; TFT; HYDROGEN PASSIVATION; TRAP STATE DENSITY; ACTIVATION ENERGY;

D O I：

10.1143/JJAP.34.719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the different hydrogen passivation effects on low-temperature (LT) processed and high-temperature (HT) processed poly-Si thin-film transistors (TFT's). The hydrogen passivation on LT poly-Si TFT's results in the increase of the field-effect mobility and the decrease of the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in HT poly-Si TFT's. The effective trap-state densities of LT poly-Si TFT before and after 5 h of hydrogenation are estimated at about 4 x 10(12)/cm(2) and 1.5 x 10(12)/cm(2), while those of HT poly-Si TFT are about 1.5 x 10(12)/cm(2) and 1.2 x 10(12)/cm(2), respectively. The activation energy of HT poly-Si TFT has been increased significantly in the-off state with hydrogen passivation, whereas that of LT device has been decreased remarkably in the on state.

引用

页码：719 / 721

页数：3

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