CHEMISTRY OF FLUORINE IN THE OXIDATION OF SILICON

被引：48

作者：

KASI, SR ^{[1
]}

LIEHR, M ^{[1
]}

COHEN, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期

关键词：

D O I：

10.1063/1.104686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical environment of fluorine in the oxide layer of metal-oxide-semiconductor (MOS) structures has been examined by surface analytical spectroscopies. HF treatment of Si(100) results in subsurface SiF formation. Upon oxidation, oxyfluoride moieties are formed with a significant accumulation of fluorine throughout the oxide layer. These changes are correlated to the electrical integrity of MOS interfaces by performing Fowler-Nordheim electron injection studies.

引用

页码：2975 / 2977

页数：3

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