EXCESS NOISE IN AMORPHOUS SELENIUM AVALANCHE PHOTODIODES

被引：16

作者：

OHSHIMA, T ^{[1
]}

TSUJI, K ^{[1
]}

SAMESHIMA, K ^{[1
]}

HIRAI, T ^{[1
]}

SHIDARA, K ^{[1
]}

TAKETOSHI, K ^{[1
]}

机构：

[1] NHK JAPAN BROADCASTING CORP, SCI & TECHNOL RES LABS, SETAGAYA KU, TOKYO 157, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期

关键词：

AMORPHOUS SELENIUM; PHOTODIODE; IMPACT IONIZATION; AVALANCHE MULTIPLICATION; APD; EXCESS NOISE;

D O I：

10.1143/JJAP.30.L1071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excess noise in amorphous Selenium avalanche photodiodes (a-Se APD) has been measured in a frequency range from 3 kHz to 30 kHz. The deduced excess noise factors, including dependences on photocurrent, frequency, applied electric field and the a-Se layer's thickness, agreed with McIntyre's theoretical values.

引用

页码：L1071 / L1074

页数：4

共 9 条

[1] IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J].

ANDO, H ;

KANBE, H .

SOLID-STATE ELECTRONICS, 1981, 24 (07) :629-634

[2]

GOTOH N, 1990, 1990 P ITE ANN CONV, P69

[3] IMPACT IONIZATION AND MOBILITIES OF CHARGE-CARRIERS AT HIGH ELECTRIC-FIELDS IN AMORPHOUS SELENIUM [J].

JUSKA, G ;

ARLAUSKAS, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01) :389-393

[4] SILICON AVALANCHE PHOTODIODES WITH LOW MULTIPLICATION NOISE AND HIGH-SPEED RESPONSE [J].

KANBE, H ;

KIMURA, T ;

MIZUSHIMA, Y ;

KAJIYAMA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1337-1343

[5] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P766

[7] ANALYSES OF NOISE IN A HIGHLY SENSITIVE IMAGE DEVICE [J].

TAKETOSHI, K ;

TANIOKA, K ;

ANDOH, F ;

YAMAZAKI, J ;

TAKASAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (02) :178-186

[8] AN AVALANCHE-MODE AMORPHOUS SELENIUM PHOTOCONDUCTIVE LAYER FOR USE AS A CAMERA TUBE TARGET [J].

TANIOKA, K ;

YAMAZAKI, J ;

SHIDARA, K ;

TAKETOSHI, K ;

KAWAMURA, T ;

ISHIOKA, S ;

TAKASAKI, Y .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :392-394

[9] IMPACT IONIZATION PROCESS IN AMORPHOUS SELENIUM [J].

TSUJI, K ;

TAKASAKI, Y ;

HIRAI, T ;

TAKETOSHI, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :94-96

← 1 →