SILICON CRYSTALLITE FORMATION IN ION-IMPLANTED QUARTZ

被引:6
作者
RAMABADRAN, UB [1 ]
JACKSON, HE [1 ]
FARLOW, GC [1 ]
机构
[1] WRIGHT STATE UNIV,DEPT PHYS,DAYTON,OH 45435
关键词
D O I
10.1063/1.102463
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1199 / 1201
页数:3
相关论文
共 9 条
[1]   THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].
CAMPBELL, IH ;
FAUCHET, PM .
SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741
[2]   PRECIPITATION OF GROUP-V ELEMENTS AND GE IN SIO2 AND THEIR DRIFT IN A TEMPERATURE-GRADIENT [J].
CELLER, GK ;
TRIMBLE, LE ;
SHENG, TT ;
KOSINSKI, SG ;
WEST, KW .
APPLIED PHYSICS LETTERS, 1988, 53 (13) :1178-1180
[3]  
Chu W. K., 1978, BACKSCATTERING SPECT
[4]   PHOTOLUMINESCENCE STUDIES OF SILICON-ON-INSULATOR SUBSTRATES FORMED BY OXYGEN IMPLANTATION [J].
DAVEY, ST ;
DAVIS, JR ;
REESON, KJ ;
HEMMENT, PLF .
APPLIED PHYSICS LETTERS, 1988, 52 (06) :465-467
[5]  
PINIZZOTTO RF, 1984, MATER RES SOC S P, V27, P265
[6]   LONGITUDINAL AND TRANSVERSE OPTICAL LATTICE VIBRATIONS IN QUARTZ [J].
SCOTT, JF ;
PORTO, SPS .
PHYSICAL REVIEW, 1967, 161 (03) :903-&
[7]   LASER-INDUCED RE-EMISSION OF SILICON ATOMS IMPLANTED INTO QUARTZ [J].
SHIMIZU, T ;
ITOH, N ;
MATSUNAMI, N .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3663-3666
[8]   MULTIPHONON RAMAN-SPECTRUM OF SILICON [J].
TEMPLE, PA ;
HATHAWAY, CE .
PHYSICAL REVIEW B, 1973, 7 (08) :3685-3697
[9]   ORDER PARAMETERS IN A-SI SYSTEMS [J].
TSU, R ;
GONZALEZHERNANDEZ, J ;
DOEHLER, J ;
OVSHINSKY, SR .
SOLID STATE COMMUNICATIONS, 1983, 46 (01) :79-82