ELECTRON-IRRADIATION OF SILICON DIOXIDE - A NONDESTRUCTIVE MEASUREMENT OF THE IN-DEPTH INDUCED COMPOSITIONAL CHANGES

被引：10

作者：

CALLIARI, L

MARCHETTI, F

机构：

来源：

APPLIED SURFACE SCIENCE | 1992年 / 59卷 / 01期

关键词：

D O I：

10.1016/0169-4332(92)90171-S

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A real-time and non-destructive method to measure the concentration profiles developing under electron irradiation in the near-surface region of silicon dioxide is presented. The method, based on the different probing depth of Auger transitions lying at different kinetic energies, is proven to be able to provide reliable in-depth information. It is used here to compare two irradiations performed at different dose rates, this allowing to demonstrate the role of the dose rate in the build-up of the electron-induced damage.

引用

页码：79 / 85

页数：7

共 19 条

[1]

Baragiola R. A., 1990, Desorption Induced by Electronic Transitions DIET IV. Proceedings of the Fourth International Workshop, P322

[2]

Calliari L., 1990, Desorption Induced by Electronic Transitions DIET IV. Proceedings of the Fourth International Workshop, P373

[3] PREFERENTIAL EFFECTS IN ELECTRON-IRRADIATED SILICON DIOXIDE [J].