OBSERVATION OF ELECTRON-BEAM DAMAGE IN THIN-FILM SIO2 ON SI WITH SCANNING AUGER-ELECTRON MICROSCOPE

被引：27

作者：

ICHIMURA, S

SHIMIZU, R

机构：

[1] Department of Applied Physics, Osaka University, Suita

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron beam damage to thin-film SiO2 was observed with a scanning Auger electron microscope. After a certain degree of electron beam exposure, changes in both the surface topography and chemical composition were investigated. The result suggested that there is a close relationship between the beam damage and the dissipation of incident energy in thin-film SiO 2.

引用

页码：6020 / 6022

页数：3

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