RAPID THERMAL ANNEALING OF P-TYPE SILICON - CORRELATION BETWEEN DEEP-LEVEL TRANSIENT SPECTROSCOPY AND LIFETIME MEASUREMENTS

被引：7

作者：

POGGI, A ^{[1
]}

SUSI, E ^{[1
]}

BUTTURI, MA ^{[1
]}

CAROTTA, MC ^{[1
]}

机构：

[1] UNIV FERRARA,DIPARTIMENTO FIS,I-44100 FERRARA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 03期

关键词：

D O I：

10.1149/1.2054806

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The correlation between minority carrier lifetime and deep-level transient spectroscopy measurements was used in order to obtain more information about the mechanisms of defect formation and annealing in CZ and FZ silicon during high temperature heating by lamp. Different energy levels induced by lamp annealings were detected: a good correlation with the lifetime behavior was observed for a donor at E(V) + 0.29 eV No direct influence of the oxygen content was detected at 1050-degrees-C, while at 750-degrees-C a gettering action of oxygen aggregates can be hypothesized.

引用

页码：754 / 758

页数：5

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[2]

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[3]

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