RHEED INTENSITY EFFECTS DURING THE GROWTH OF INAS, INSB AND IN(AS,SB) BY MOLECULAR-BEAM EPITAXY

The incorporation of both group III and group V species in InAs, InSb and ln(As,Sb) during growth by molecular beam epitaxy has been investigated in-situ by the reflection high energy electron diffraction intensity oscillation technique. Effective incorporation rates of In, As4 and Sb4 were determined for the binary compounds from which it became clear that the group III rate was dependent on the group V species involved, even at low temperatures. It is shown that controlling the In/Sb flux ratio provides a reliable method of growing calibrated ln(As,Sb) alloy compositions, a technique which may be extended to other mixed group V alloys.