MORPHOLOGICAL INSTABILITY IN EPITAXIALLY STRAINED DISLOCATION-FREE SOLID FILMS - LINEAR-STABILITY THEORY

被引:249
作者
SPENCER, BJ
VOORHEES, PW
DAVIS, SH
机构
[1] NORTHWESTERN UNIV,DEPT ENGN SCI & APPL MATH,EVANSTON,IL 60208
[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
关键词
D O I
10.1063/1.353815
中图分类号
O59 [应用物理学];
学科分类号
摘要
The morphological instability of a growing epitaxially strained dislocation-free solid film is analyzed. An evolution equation for the film surface is derived in the dilute limit of vacancies based on surface diffusion driven by a stress-dependent chemical potential. From the time-dependent linear stability problem the conditions for which a growing film is unstable are determined. It is found that the instability is driven by the lattice mismatch between the film and the substrate; however, low temperatures as well as elastically stiff substrates are stabilizing influences. The results also reveal that the critical film thickness for instability depends on the growth rate of the film itself. Detailed comparison with experimental observations indicates that the instability described exhibits many of the observed features of the onset of the ''island instability.''
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页码:4955 / 4970
页数:16
相关论文
共 36 条
[1]   THERMOMECHANICAL EQUILIBRIUM IN SOLID-FLUID SYSTEMS WITH CURVED INTERFACES [J].
ALEXANDER, JID ;
JOHNSON, WC .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :816-824
[2]   HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].
ASAI, M ;
UEBA, H ;
TATSUYAMA, C .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2577-2583
[3]   INTERFACE MORPHOLOGY DEVELOPMENT DURING STRESS-CORROSION CRACKING .1. VIA SURFACE DIFFUSION [J].
ASARO, RJ ;
TILLER, WA .
METALLURGICAL TRANSACTIONS, 1972, 3 (07) :1789-&
[4]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[5]   MORPHOLOGICAL TRANSITIONS IN SOLID EPITAXIAL OVERLAYERS [J].
BRUINSMA, R ;
ZANGWILL, A .
EUROPHYSICS LETTERS, 1987, 4 (06) :729-735
[6]   SURFACE ROUGHENING OF GE(001) DURING 200EV XE-ION BOMBARDMENT AND GE MOLECULAR-BEAM EPITAXY [J].
CHASON, E ;
TSAO, JY ;
HORN, KM ;
PICRAUX, ST ;
ATWATER, HA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2507-2511
[7]   ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].
DODSON, BW ;
TAYLOR, PA .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :642-644
[8]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[9]  
FLYNN CP, 1972, POINT DEFECTS DIFFUS, P390
[10]  
GAO H, 1991, MODERN THEORY ANISOT, P139