INTERFACE CHARACTERISTICS OF GE3N4-(N-TYPE) GAAS MIS DEVICES

被引：12

作者：

PANDE, KP

CHEN, ML

YOUSUF, M

LALEVIC, B

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1016/0038-1101(81)90177-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1107 / 1109

页数：3

共 19 条

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