LIGHT-ENHANCED REACTIVATION OF DONORS IN HYDROGENATED N-TYPE GAAS

被引：19

作者：

LEITCH, AWR ^{[1
]}

PRESCHA, T ^{[1
]}

WEBER, J ^{[1
]}

机构：

[1] UNIV PORT ELIZABETH, DEPT PHYS, POB 1600, PORT ELIZABETH 6000, SOUTH AFRICA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The donors in undoped and S-doped GaAs are passivated by exposure to a hydrogen plasma. The influence of laser illumination (1.54 eV) on the reactivation of the passivated donors at 100-degrees-C is investigated. It is found that the dissociation of the donor-hydrogen complex is greatly enhanced under illumination. The reactivation of the passivated donors follows an initially fast process, which for long annealing times reduces to a reactivation process obeying second-order kinetics. The rate-limiting process is explained in terms of the combination of two hydrogen atoms into a molecular species.

引用

页码：5912 / 5915

页数：4

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