REVERSIBLE LIGHT-INDUCED REACTIVATION OF ACCEPTORS IN P-TYPE HYDROGENATED GAAS

被引：19

作者：

SZAFRANEK, I ^{[1
]}

BOSE, SS ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1205 / 1207

页数：3

共 20 条

[1] INFLUENCE OF THE SUBSTRATE ORIENTATION ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
BOSE, SS
LEE, B
KIM, MH
STILLMAN, GE
WANG, WI
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 743 - 748
[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS
CARLSON, DE
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04): : 305 - 309
[3] HYDROGENATION AND SUBSEQUENT HYDROGEN ANNEALING OF GAAS ON SI
HSIEH, KC
FENG, MS
STILLMAN, GE
HOLONYAK, N
ITO, CR
FENG, M
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (04) : 341 - 343
[4] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL LASERS VIA HYDROGENATION
JACKSON, GS
PAN, N
FENG, MS
STILLMAN, GE
HOLONYAK, N
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1629 - 1631
[5] ROLE OF HYDROGEN IN THE FORMATION OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
MARSHALL, JM
MOYER, MD
[J]. PHYSICAL REVIEW B, 1989, 39 (02): : 1164 - 1179
[6] OPTICAL DETERMINATION OF IMPURITY COMPENSATION IN NORMAL-TYPE GALLIUM-ARSENIDE
KAMIYA, T
WAGNER, E
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1928 - 1934
[7] RECOMBINATION ENHANCED DEFECT REACTIONS
KIMERLING, LC
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401
[8] HYDROGEN PASSIVATION OF C ACCEPTORS IN HIGH-PURITY GAAS
PAN, N
BOSE, SS
KIM, MH
STILLMAN, GE
CHAMBERS, F
DEVANE, G
ITO, CR
FENG, M
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 596 - 598
[9] PAN N, 1988, MATER RES SOC S P, V126, P257
[10] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423

← 1 2 →