PHOTOLUMINESCENCE FROM SUBMICRON CAF2ND FILMS GROWN EPITAXIALLY ON SI(111) AND AL(111)/SI(111)

被引：16

作者：

CHO, CC

DUNCAN, WM

LIN, TH

FAN, SK

机构：

[1] Texas Instruments Incorporated, Central Research Laboratories, MS 147, Dallas, TX 75265

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nd3+ doped CaF2 films have been grown epitaxially on Si(111) and Al(111)/Si(111) using CaF2 and NdF3 evaporation. Photoluminescence spectra from these samples show high intensity and narrow emission linewidth even when the thickness of the CaF2:Nd films is reduced to 0.2 mum. The 10 457 angstrom emission line is not quenched until the Nd concentration exceeds 3.8 wt.%. Moreover, while similar spectra are observed, the photoluminescence intensity from the CaF2:Nd films grown on Al/Si(111) is significantly higher than from the CaF2:Nd on Si(111).

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页码：1757 / 1759

页数：3

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