REDUCED-PRESSURE MOCVD OF HIGHLY CRYSTALLINE BATIO3 THIN-FILMS

被引：29

作者：

VANBUSKIRK, PC ^{[1
]}

GARDINER, R ^{[1
]}

KIRLIN, PS ^{[1
]}

NUTT, S ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 03期

关键词：

D O I：

10.1557/JMR.1992.0542

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial BaTiO3 films have been grown on NdGaO3[100] substrates by reduced pressure MOCVD for the first time. The substrate temperature was 1000-degrees-C and the total pressure was 4 Torr. Electron and x-ray diffraction measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100], with [110] also present. TEM and selected area electron diffraction (SAED) indicate two specific orientational relationships between the [110] and the [001] diffraction patterns.

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页码：542 / 545

页数：4

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