PATTERNING OF SI(100) - SPONTANEOUS ETCHING WITH BR2

被引：47

作者：

CHANDER, M

LI, YZ

RIOUX, D

WEAVER, JH

机构：

[1] Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.71.4154

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic resolution scanning tunneling microscopy of Si(100)-(2 x 1) shows that terrace patterning is possible during etching under tuned conditions of Br fluence and temperature. This patterning reflects the coordinated breaking of dimer bonds with redimerization that produces rows of Si doubly bonded to Br adjacent to Si dimers singly bonded to Br. The concerted desorption of the SiBr2 units yields a missing row pattern.

引用

页码：4154 / 4157

页数：4

共 17 条

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