QUANTUM-WELL STRUCTURES OF DIRECT-BAND-GAP GAAS1-XPX/GAAS STUDIED BY PHOTOLUMINESCENCE AND RAMAN-SPECTROSCOPY

被引：35

作者：

PISTOL, ME

LIU, X

机构：

[1] Department of Solid State Physics, University of Lund, Box 118

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.45.4312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the successful growth of quantum-well structures of GaAs1-xPx/GaAs/GaAs1-xPx on GaAs substrates. The samples are studied by photoluminescence and Raman spectroscopy. The structures are grown by metalorganic vapor-phase epitaxy with the thin GaAs1-xPx barriers strained to the GaAs crystal lattice. Quantum size effects are observed in the structures as optical transitions in photoluminescence and photoluminescence-excitation spectroscopy. The strain in the pseudomorphic GaAs1-xPx barriers is studied by Raman spectroscopy through the investigation of strain-induced frequency shifts of the LO phonons. By using thick, relaxed GaAs1-xPx alloy samples as references, the compositions x in the thin, strained GaAs1-xPx barriers can be determined from the ratio of the intensity of LO(GaP)GAMMA to that of LO(GaAs)GAMMA. The strain-induced Raman-frequency shift has been obtained by subtracting the alloy-induced shift from the total measured frequency shift. Our results are in reasonable agreement with lattice-dynamic theory.

引用

页码：4312 / 4319

页数：8

共 27 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].