USE OF RAMAN-SPECTROSCOPY TO CHARACTERIZE STRAIN IN III-V EPILAYERS - APPLICATION TO INAS ON GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

DIEBOLD, AC ^{[1
]}

STEINHAUSER, SW ^{[1
]}

MARIELLA, RP ^{[1
]}

机构：

[1] UNIV CALIF LAWRENCE LIVERMORE NATL LAB, LIVERMORE, CA 94550 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：365 / 370

页数：6

共 29 条

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