QUASI-PERIODIC CONTRAST INHOMOGENEITIES INDUCED BY CLUSTERS IN THE IN0.52AL0.48AS/INP INTERFACE

被引：8

作者：

PEIRO, F

CORNET, A

MORANTE, JR

GEORGAKILAS, A

CHRISTOU, A

机构：

[1] FDN RES TECHNOL HELLAS,IRAKLION,GREECE

[2] UNIV MARYLAND,CALCE,CTR ELECTR,COLL PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of In0.52Al0.48As films grown on InP (100) by molecular beam epitaxy, at growth temperatures in the range of 530-590-degrees-C, are analyzed by transmission electron microscopy. The existence of contrast inhomogeneities along the [010] fcc soft directions, the appearance of which depends on the temperature and the distance to the substrate, is reported. It is shown that these contrast irregularities in InAlAs are related directly to the existence of precipitates in the InAlAs/InP interface, whose origin can be found in the formation of an InAs layer under an As-stabilized InP surface.

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页码：2265 / 2267

页数：3

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