CAPACITY MEASUREMENTS AND THE ENERGY-DISTRIBUTION OF SURFACE-STATES AT THE ELECTROLYTE-GAAS INTERFACE

被引:29
作者
JANIETZ, P
WEICHE, R
WESTFAHL, J
LANDSBERG, R
DEHMLOW, R
机构
关键词
D O I
10.1016/0368-1874(80)80013-X
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
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页码:23 / 33
页数:11
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共 39 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[3]   SURFACE CONDUCTANCE AND THE FIELD EFFECT ON GERMANIUM [J].
BARDEEN, J ;
COOVERT, RE ;
MORRISON, SR ;
SCHRIEFFER, JR ;
SUN, R .
PHYSICAL REVIEW, 1956, 104 (01) :47-51
[4]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[5]   ELECTROLYTIC DEPOSITION OF THIN METAL-FILMS ON SEMICONDUCTOR SUBSTRATES [J].
BINDRA, P ;
GERISCHER, H ;
KOLB, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1012-1018
[6]  
BIRINTSEVA TP, 1965, IAN SSSR KH, P251
[7]  
BOHNENKAMP K, 1957, Z ELEKTROCHEM, V61, P1184
[8]  
BROWN WL, 1957, SEMICONDUCTOR SURF 1
[9]  
BROWN WL, SEMICONDUCTOR SURF 2
[10]   PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :228-232