ON DIELECTRIC CONSTANT OF GAAS AT MICROWAVE FREQUENCIES

被引：9

作者：

BRASLAU, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 11期

关键词：

D O I：

10.1063/1.1755009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：350 / &

共 10 条

[1]

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REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (11) :1614-&

[3]

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[5] MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS [J].

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ELLIOTT, BJ .

PHYSICS LETTERS, 1966, 22 (04) :369-+

[6] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J].

HAMBLETON, K ;

HOLEMAN, BR ;

HILSUM, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498) :1147-&

[7] RESONANCE BEHAVIOR OF DIELECTRIC CONSTANT OF GAAS AT MICROWAVE FREQUENCIES [J].

LARRABEE, RD ;

HICINBOTHEN, WA .

APPLIED PHYSICS LETTERS, 1967, 10 (12) :334-+

[8]

MCCUMBER DE, 1966, IEEE T ELECTRON DEV, VED13, P4

[9] PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS [J].

WOODALL, JM ;

WOODS, JF .

SOLID STATE COMMUNICATIONS, 1966, 4 (01) :33-&

[10]

1963, AMERICAN I PHYSICS H, P5

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