SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF THIN METAL-FILMS ON THE GAAS(110) SURFACE

被引:46
作者
SHIH, CK
FEENSTRA, RM
MARTENSSON, P
机构
[1] IBM Research Division, T. J. Watson Research Center, New York, 10598, Yorktown Heights
[2] IFM, University of Linkoping, S-581 83, Linkoping
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 04期
关键词
D O I
10.1116/1.576562
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The scanning tunneling microscope is used to study the properties of metal films with thicknesses in the range 1 -10 monolayers (ML). Results are presented for two materials—antimony and tin, on the GaAs(110) surface. The acquisition and analysis methods used in the spectroscopic measurements are described in detail. For Sb films, a layered structure is observed. Very low conductivity is found at the Fermi-level, indicating semimetallic behavior. For Sn films, a layered structure with semimetallic nature is observed below 2 ML. It is found that the existence of an adatom layer is important for layer by layer growth of the Sn overlayer. At Sn coverages above 3 ML, a structural phase transition is observed, accompanied by an electronic transition to a metallic state. © 1990, American Vacuum Society. All rights reserved.
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收藏
页码:3379 / 3385
页数:7
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