NEUTRON-IRRADIATION EFFECTS ON PZT THIN-FILMS FOR NONVOLATILE-MEMORY APPLICATIONS

被引:34
作者
MOORE, RA
BENEDETTO, JM
MCGARRITY, JM
MCLEAN, FB
机构
[1] Harry Diamond Laboratories, Adelphi
关键词
D O I
10.1109/23.124077
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper examines the effects of neutron irradiation on ferroelectric (FE) lead-zirconate-titanate (PZT) thin films. The data show only a slight loss in the FE switched charge, as measured by the hysteresis loop, up to 1 x 10(15) n/cm2. The retained polarization, as measured by a pulse technique, showed a larger loss of remanent polarization which saturated at the lowest fluence measured (1 x 10(13) n/cm2). However, in neither case does it appear that the film was degraded sufficiently to cause devices made from sol-gel PZT to "fail" at fluences at or below 1 x 10(15) n/cm2. The endurance characteristics of the film were unchanged due to neutron irradiation.
引用
收藏
页码:1078 / 1082
页数:5
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