OXYGEN-TRANSPORT UNDER AN AXIAL MAGNETIC-FIELD IN CZOCHRALSKI SILICON GROWTH

Oxygen transport in the Si melt is simulated. The magnetic field not only damps the convection in the melt, but also acts to make the flow in the melt axially two-dimensional. There are two flow regimes depending on the convection in the melt: thermal convection dominant regime and forced convection dominant regime. When the thermal convection due to temperature inhomogeneity is dominant in the melt, the oxygen concentration incorporated into the crystal decreases with the increase of the magnetic field. When the forced convection due to counter-rotation between the crystal and the crucible is dominant, the oxygen concentration increases. The forced convection due to a single rotation of the crystal decreases the oxygen concentration. The radial oxygen distribution is also examined.