INTERFACE ELECTRONIC-STRUCTURES IN AN INAS/GAAS LATTICE-MISMATCHED SYSTEM

被引：30

作者：

TAGUCHI, A

OHNO, T

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.39.7803

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7803 / 7810

页数：8

共 32 条

[11] THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES - COMMENT [J].

MARGARITONDO, G .

PHYSICAL REVIEW B, 1985, 31 (04) :2526-2527

[12] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].

MARTIN, RM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+

[13] INTERFACE PHENOMENA AT SEMICONDUCTOR HETEROJUNCTIONS - LOCAL-DENSITY VALENCE-BAND OFFSET IN GAAS/ALAS [J].

MASSIDDA, S ;

MIN, BI ;

FREEMAN, AJ .

PHYSICAL REVIEW B, 1987, 35 (18) :9871-9874

[14] (INAS)M(GAAS)N SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

MATSUI, Y ;

HAYASHI, H ;

TAKAHASHI, M ;

KIKUCHI, K ;

YOSHIDA, K .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :280-282

[15] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS RANDOM SOLID-SOLUTIONS [J].

MIKKELSEN, JC ;

BOYCE, JB .

PHYSICAL REVIEW B, 1983, 28 (12) :7130-7140

[16]

MIKKELSEN JC, 1984, JPN J APPL PHYS PT 2, V23, pL208

[17] BAND-STRUCTURE OF SEMICONDUCTOR SUPERLATTICES WITH ULTRATHIN LAYERS (GAAS)N/(ALAS)N WITH N = 1, 2, 3, 4 [J].

NAKAYAMA, T ;

KAMIMURA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (12) :4726-4734

[18] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

[19] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS [J].

PICKETT, WE ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1978, 17 (02) :815-828

[20] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF (110) GE-ZNSE [J].

PICKETT, WE ;

COHEN, ML .

PHYSICAL REVIEW B, 1978, 18 (02) :939-944

← 1 2 3 4 →