STUDY OF THE SI(111)7X7 SURFACE BY RHEED ROCKING CURVE ANALYSIS

被引：45

作者：

HANADA, T ^{[1
]}

INO, S ^{[1
]}

DAIMON, H ^{[1
]}

机构：

[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

SURFACE SCIENCE | 1994年 / 313卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)91162-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 x 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.

引用

页码：143 / 154

页数：12

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