HIGHLY DOPED EVAPORATED AMORPHOUS SILICON BY ALKALI IMPLANTATION

被引：8

作者：

BEYER, W ^{[1
]}

BARNA, A ^{[1
]}

WAGNER, H ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,D-3550 MARBURG,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evaporated films of amorphous silicon can be doped interstitially by implantation of alkali ions. Room temperature conductivity values as high as σ=2×10-3 (Ω cm)-1 and activation energies of σ as low as 0.25 eV are obtained by implantation of 1% potassium in films prepared with a low rate of deposition. The doped state is stable up to 320°C. Results from stepwise doping with sodium indicate a rather constant density of localized states in the gap of the order 3×1019/cm3 eV for rapidly evaporated films.

引用

页码：539 / 541

页数：3

共 16 条

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