NEW TRENDS IN SIMOX

被引:50
作者
VANOMMEN, AH
机构
关键词
D O I
10.1016/0168-583X(89)90770-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:194 / 202
页数:9
相关论文
共 40 条
[1]  
AUBERTONHERVE AJ, 1988, MAR P EUR SOI WORKSH
[2]   EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].
BOURRET, A ;
THIBAULTDESSEAUX, J ;
SEIDMAN, DN .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836
[3]  
BOURRET A, 1987, INST PHYS CONF SER, P39
[4]   HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].
CELLER, GK ;
HEMMENT, PLF ;
WEST, KW ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534
[5]  
CHEEK T, 1988, MATER RES SOC S P, V107
[6]  
CHEN CE, 1988, MATER RES SOC S P, V107
[7]   SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246
[8]   PHOTOLUMINESCENCE AND MICROSTRUCTURAL PROPERTIES OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].
DUNCAN, WM ;
CHANG, PH ;
MAO, BY ;
CHEN, CE .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :773-775
[9]  
ELGHOR MK, 1987, MATER RES SOC S P, V74, P591
[10]   MONITORING OF SIMOX LAYER PROPERTIES AND IMPLANTATION TEMPERATURE BY OPTICAL MEASUREMENTS [J].
HARBEKE, G ;
STEIGMEIER, EF ;
HEMMENT, P ;
REESON, KJ ;
JASTRZEBSKI, L .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (10) :687-690