EXTREMELY HIGH ELECTRON MOBILITIES IN MODULATION DOPED GA1-XINXAS/INP HETEROSTRUCTURES GROWN BY LP-MOVPE

被引：16

作者：

HARDTDEGEN, H

MEYER, R

LOKENLARSEN, H

APPENZELLER, J

SCHAPERS, T

LUTH, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90664-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on n-type modulation doped Ga1-xInxAs/InP (x greater-than-or-equal-to 0.53) heterostructures grown by MOVPE. The dependence of electron mobility in the GaInAs 2DEG on increasing indium content was investigated by temperature dependent Hall measurements. Mobilities as high as 1.5 x 10(4) cm2/V.s and 4.5 x 10(5) at 300 and 6 K. respectively for x = 0.77 were obtained. The unusually high values can be explained in terms of a decrease of the effective electron mass and of suppression of alloy scattering in the stressed interlayers.

引用

页码：521 / 523

页数：3

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