EFFECT OF HETEROSTRUCTURE ON HOLE DIFFUSION LENGTH OF EPITAXIAL GAAS

被引：15

作者：

YOUNG, ML ^{[1
]}

ROWLAND, MC ^{[1
]}

机构：

[1] SERV ELECTR, RES LAB, BALDOCK, HERTSHIRE, ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1002/pssa.2210160231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：603 / 614

页数：12

相关论文

共 22 条

[1] MICROSTRUCTURAL EFFECTS ON MINORITY-CARRIER DIFFUSION LENGTH IN EPITAXIAL GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
WILLIAMS, BF
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 220 - &
[2] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[4] OPTICAL MICROPROBE RESPONSE OF GAAS DIODES
ASHLEY, KL
BIARD, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) : 129 - &
[5] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS
AUKERMAN, LW
MILLEA, MF
MCCOLL, M
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 685 - &
[6] CRYSTALLOGRAPHIC IMPERFECTIONS IN SILICON
BOOKER, GR
[J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38): : 298 - &
[7] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON
BOOKER, GR
STICKLER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &
[8] Brice DC, 1967, J MATER SCI, V2, P131
[9] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS ON GAP ELECTROLUMINESCENT DIODE MATERIALS
CHASE, BD
HOLT, DB
[J]. JOURNAL OF MATERIALS SCIENCE, 1972, 7 (03) : 265 - &
[10] Hall R. N., 1960, P IEE, V106, P923