INSITU DETERMINATION OF FREE-CARRIER CONCENTRATIONS BY REFLECTANCE DIFFERENCE SPECTROSCOPY

被引：86

作者：

TANAKA, H ^{[1
]}

COLAS, E ^{[1
]}

KAMIYA, I ^{[1
]}

ASPNES, DE ^{[1
]}

BHAT, R ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We determine types and concentrations of free carriers in GaAs layers under organometallic chemical vapor deposition growth conditions from the linear electro-optic structure observed near 3 eV in reflectance-difference spectroscopy. The sensitivity is about 10(17) cm-3 at 400-degrees-C and 10(18) cm-3 at 600-degrees-C, sufficient to measure common doping levels at or near growth temperatures. We observed the transition between n- and p-type doping during atomic layer epitaxy of a carbon-doped p-type layer on an n-type substrate at 470-degrees-C.

引用

页码：3443 / 3445

页数：3

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