DRIFT OF MINORITY CARRIERS IN THE PRESENCE OF TRAPPING

被引：6

作者：

JONSCHER, AK

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1957年 / 70卷 / 02期

关键词：

D O I：

10.1088/0370-1301/70/2/309

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：223 / 229

页数：7

共 6 条

[1]

FAN, 1954, PHYSICA, V20, P855

[2] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1953, 92 (06) :1424-1428

[3] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1955, 100 (02) :606-615

[4] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].

HORNBECK, JA ;

HAYNES, JR .

PHYSICAL REVIEW, 1955, 97 (02) :311-321

[5]

RITTNER ES, 1956, PHOTOCONDUCTIVITY

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842