LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - SINGLE CARRIER VERSUS EXCITONIC MECHANISMS

被引：15

作者：

STUTZMANN, M

机构：

[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 23期

关键词：

D O I：

10.1063/1.102928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantitative explanation is derived for the light-induced degradation of compensated amorphous silicon. The analysis suggests that donor levels in compensated hydrogenated amorphous silicon (a-Si:H) lead to an efficient spatial separation of trapped electrons and holes, thereby preventing excitonic tail-to-tail recombination thought to be responsible for metastable defect creation during illumination. This confirms the original defect creation model which has recently been challenged by single carrier mechanisms invoking dispersive hydrogen motion as the rate-limiting step.

引用

页码：2313 / 2315

页数：3

共 13 条

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