THERMAL-OXIDATION OF AMORPHOUS TERNARY TA36SI14N50 THIN-FILMS

被引:17
作者
POKELA, PJ
REID, JS
KWOK, CK
KOLAWA, E
NICOLET, MA
机构
[1] California Institute of Technology, Pasadena
关键词
D O I
10.1063/1.349345
中图分类号
O59 [应用物理学];
学科分类号
摘要
The oxidation kinetics of reactively sputtered amorphous Ta36Si14N50 thin films are studied in dry and wet ambient in the temperature range of 650-850-degrees-C by backscattering spectrometry, Dektak profilometer, and x-ray diffraction analyses. The dry oxidation is well described by a parabolic time dependence which corresponds to a process controlled by the diffusion of the oxidant in the oxide. The growth of the oxide in wet ambient is initially very rapid and then proceeds linearly which means that the process is reaction limited. Both oxidation rates are thermally activated. The activation energies are 2.0 eV for dry and 1.4 eV for wet ambient. The pre-exponential factors are 0.17 x 10(16) angstrom 2/min and 7.4 x 10(8) angstrom/min, respectively. Both the dry and wet oxidation of the amorphous ternary Ta36Si14N50 film result in the formation of an x-ray amorphous Ta14Si5.5O80 layer.
引用
收藏
页码:2828 / 2832
页数:5
相关论文
共 20 条
[1]   THERMAL-OXIDATION AND RESISTIVITY OF TANTALUM NITRIDE FILMS [J].
BRADY, DP ;
FUSS, FN ;
GERSTENBERG, D .
THIN SOLID FILMS, 1980, 66 (03) :287-302
[2]  
Chu W.-K., 1978, BACKSCATTERING SPECT
[3]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[4]  
Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]
[5]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6]   THERMAL-OXIDATION OF TRANSITION-METAL SILICIDES [J].
JIANG, H ;
PETERSSON, CS ;
NICOLET, MA .
THIN SOLID FILMS, 1986, 140 (01) :115-129
[7]   REACTION OF FLOWING STEAM WITH REFRACTORY METALS NIOBIUM AND TANTALUM [J].
KILPATRICK, M ;
LOTT, SK .
JOURNAL OF THE LESS-COMMON METALS, 1965, 8 (05) :299-+
[8]   AMORPHOUS TA-SI-N THIN-FILM ALLOYS AS DIFFUSION BARRIER IN AL/SI METALLIZATIONS [J].
KOLAWA, E ;
MOLARIUS, JM ;
NIEH, CW ;
NICOLET, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :3006-3010
[9]  
KOLAWA E, 1990, 3RD ASM INT EL MAT P, P243
[10]  
KOLAWA E, UNPUB IEEE ELECTRON