LOW-TEMPERATURE LENGTH CHANGE MEASUREMENTS OF ELECTRON-IRRADIATED GERMANIUM AND SILICON

被引：34

作者：

VOOK, FL

机构：

来源：

PHYSICAL REVIEW | 1962年 / 125卷 / 03期

关键词：

D O I：

10.1103/PhysRev.125.855

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：855 / &

共 37 条

[1] CHANGES IN MACROSCOPIC SHAPE, LATTICE PARAMETER, AND DENSITY IN CRYSTALS DUE TO POINT DEFECTS [J].

BALLUFFI, RW ;

SIMMONS, RO .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2284-2288

[2] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[3]

BENNEMANN KH, 1960, Z NATURFORSCH PT A, V15, P772

[4] LOW-TEMPERATURE REACTOR IRRADIATION EFFECTS IN METALS [J].

BLEWITT, TH ;

COLTMAN, RR ;

KLABUNDE, CE ;

NOGGLE, TS .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (06) :639-644

[5] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J].

BROWN, WL ;

AUGUSTYNIAK, WM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1300-1309

[6] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].

BROWN, WL ;

AUGUSTYNIAK, WM ;

WAITE, TR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1258-1268

[7] IRRADIATION DAMAGE IN GERMANIUM AND SILICON DUE TO ELECTRONS AND GAMMA RAYS [J].

CAHN, JH .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1310-1316

[8]

CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294

[9] THE DETERMINATION OF THE ELASTIC FIELD OF AN ELLIPSOIDAL INCLUSION, AND RELATED PROBLEMS [J].

ESHELBY, JD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1226) :376-396

[10] DYNAMICS OF RADIATION DAMAGE [J].

GIBSON, JB ;

GOLAND, AN ;

MILGRAM, M ;

VINEYARD, GH .

PHYSICAL REVIEW, 1960, 120 (04) :1229-1253

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